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| Datasheet | IXTH76N25T |
| File Size | 207.44 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | IXTH76N25T, IXTQ76N25T, IXTA76N25T, IXTP76N25T |
| Description | MOSFET N-CH 250V 76A TO-247, MOSFET N-CH 250V 76A TO-3P, MOSFET N-CH 250V 76A TO-263, MOSFET N-CH 250V 76A TO-220 |
IXTH76N25T - IXYS
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 39mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature - Power Dissipation (Max) 460W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 39mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature - Power Dissipation (Max) 460W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 39mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature - Power Dissipation (Max) 460W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 39mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature - Power Dissipation (Max) 460W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |