Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXTI10N60P |
| File Size | 241.26 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTI10N60P |
| Description | MOSFET N-CH 600V 10A I2-PAK |
IXTI10N60P - IXYS
The Products You May Be Interested In
 |
IXTI10N60P | IXYS | MOSFET N-CH 600V 10A I2-PAK | 117 More on Order |
URL Link
www.oemstron.com/datasheet/IXTI10N60P
|
Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 (I2PAK) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |