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| Datasheet | IXTN200N10T |
| File Size | 168.48 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTN200N10T |
| Description | MOSFET N-CH 100V 200A SOT-227 |
IXTN200N10T - IXYS
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IXTN200N10T | IXYS | MOSFET N-CH 100V 200A SOT-227 | 224 More on Order |
URL Link
www.oemstron.com/datasheet/IXTN200N10T
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Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V FET Feature - Power Dissipation (Max) 550W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |