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| Datasheet | IXTN210P10T |
| File Size | 181.71 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTN210P10T |
| Description | MOSFET P-CH 100V 210A SOT-227 |
IXTN210P10T - IXYS
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IXTN210P10T | IXYS | MOSFET P-CH 100V 210A SOT-227 | 318 More on Order |
URL Link
www.oemstron.com/datasheet/IXTN210P10T
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Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 210A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 69500pF @ 25V FET Feature - Power Dissipation (Max) 830W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |