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| Datasheet | IXTN30N100L |
| File Size | 125.79 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTN30N100L |
| Description | MOSFET N-CH 1000V 30A SOT-227 |
IXTN30N100L - IXYS
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IXTN30N100L | IXYS | MOSFET N-CH 1000V 30A SOT-227 | 320 More on Order |
URL Link
www.oemstron.com/datasheet/IXTN30N100L
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 450mOhm @ 15A, 20V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 545nC @ 20V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V FET Feature - Power Dissipation (Max) 800W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |