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| Datasheet | IXTN32P60P |
| File Size | 117.26 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTN32P60P |
| Description | MOSFET P-CH 600V 32A SOT227 |
IXTN32P60P - IXYS
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IXTN32P60P | IXYS | MOSFET P-CH 600V 32A SOT227 | 480 More on Order |
URL Link
www.oemstron.com/datasheet/IXTN32P60P
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Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11100pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |