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IXTN62N50L Datasheet

IXTN62N50L Cover
DatasheetIXTN62N50L
File Size130.76 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTN62N50L
Description MOSFET N-CH 500V 62A SOT-227

IXTN62N50L - IXYS

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IXTN62N50L IXTN62N50L IXYS MOSFET N-CH 500V 62A SOT-227 238

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URL Link

IXTN62N50L

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

100mOhm @ 500mA, 20V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

550nC @ 20V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

11500pF @ 25V

FET Feature

-

Power Dissipation (Max)

800W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC