Datasheet | IXTP8N50PM |
File Size | 649.72 KB |
Total Pages | 2 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IXTP8N50PM |
Description | MOSFET N-CH 500V 4A TO-220 |
IXTP8N50PM - IXYS
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IXTP8N50PM | IXYS | MOSFET N-CH 500V 4A TO-220 | 336 More on Order |
URL Link
www.oemstron.com/datasheet/IXTP8N50PM
IXYS Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V FET Feature - Power Dissipation (Max) 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |