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IXTQ110N055P Datasheet

IXTQ110N055P Cover
DatasheetIXTQ110N055P
File Size254.77 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts IXTQ110N055P, IXTA110N055P, IXTP110N055P
Description MOSFET N-CH 55V 110A TO-3P, MOSFET N-CH 55V 110A TO-263, MOSFET N-CH 55V 110A TO-220

IXTQ110N055P - IXYS

IXTQ110N055P Datasheet Page 1
IXTQ110N055P Datasheet Page 2
IXTQ110N055P Datasheet Page 3
IXTQ110N055P Datasheet Page 4
IXTQ110N055P Datasheet Page 5

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IXTA110N055P IXTA110N055P IXYS MOSFET N-CH 55V 110A TO-263 266

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IXTP110N055P IXTP110N055P IXYS MOSFET N-CH 55V 110A TO-220 150

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URL Link

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2210pF @ 25V

FET Feature

-

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2210pF @ 25V

FET Feature

-

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2210pF @ 25V

FET Feature

-

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3