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| Datasheet | IXTQ200N06P |
| File Size | 149.93 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTQ200N06P |
| Description | MOSFET N-CH 60V 200A TO-3P |
IXTQ200N06P - IXYS
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IXTQ200N06P | IXYS | MOSFET N-CH 60V 200A TO-3P | 259 More on Order |
URL Link
www.oemstron.com/datasheet/IXTQ200N06P
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Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5mOhm @ 400A, 15V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V FET Feature - Power Dissipation (Max) 714W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |