Datasheet | IXTQ42N25P |
File Size | 252.29 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTQ42N25P, IXTA42N25P, IXTP42N25P |
Description | MOSFET N-CH 250V 42A TO-3P, MOSFET N-CH 250V 42A TO-263, MOSFET N-CH 250V 42A TO-220 |
IXTQ42N25P - IXYS
The Products You May Be Interested In
IXTQ42N25P | IXYS | MOSFET N-CH 250V 42A TO-3P | 372 More on Order |
|
IXTA42N25P | IXYS | MOSFET N-CH 250V 42A TO-263 | 378 More on Order |
|
IXTP42N25P | IXYS | MOSFET N-CH 250V 42A TO-220 | 351 More on Order |
URL Link
IXYS Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 84mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
IXYS Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 84mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXYS Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 84mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |