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| Datasheet | IXTR200N10P |
| File Size | 151.63 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTR200N10P |
| Description | MOSFET N-CH 100V 120A ISOPLUS247 |
IXTR200N10P - IXYS
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IXTR200N10P | IXYS | MOSFET N-CH 100V 120A ISOPLUS247 | 123 More on Order |
URL Link
www.oemstron.com/datasheet/IXTR200N10P
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 235nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |