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| Datasheet | IXTT360N055T2 |
| File Size | 181.89 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXTT360N055T2, IXTH360N055T2 |
| Description | MOSFET N-CH 55V 360A TO268, MOSFET N-CH 55V 360A TO-247 |
IXTT360N055T2 - IXYS
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Manufacturer IXYS Series TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 360A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 25V FET Feature - Power Dissipation (Max) 935W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer IXYS Series TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 360A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 25V FET Feature - Power Dissipation (Max) 935W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |