Datasheet | IXTU01N100D |
File Size | 94.12 KB |
Total Pages | 2 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTU01N100D, IXTY01N100D, IXTP01N100D |
Description | MOSFET N-CH 1000V 0.1A TO-251, MOSFET N-CH 1000V 0.1A TO-252AA, MOSFET N-CH 1KV .1A TO-220AB |
IXTU01N100D - IXYS
The Products You May Be Interested In
IXTU01N100D | IXYS | MOSFET N-CH 1000V 0.1A TO-251 | 166 More on Order |
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IXTY01N100D | IXYS | MOSFET N-CH 1000V 0.1A TO-252AA | 735 More on Order |
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IXTP01N100D | IXYS | MOSFET N-CH 1KV .1A TO-220AB | 1980 More on Order |
URL Link
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 80Ohm @ 50mA, 0V Vgs(th) (Max) @ Id 5V @ 25µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 1.1W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 110Ohm @ 50mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 1.1W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 110Ohm @ 50mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 1.1W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |