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| Datasheet | IXTY1R4N60P TRL |
| File Size | 825.77 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTY1R4N60P TRL |
| Description | MOSFET N-CH 600V 1.4A D-PAK |
IXTY1R4N60P TRL - IXYS
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IXTY1R4N60P TRL | IXYS | MOSFET N-CH 600V 1.4A D-PAK | 386 More on Order |
URL Link
www.oemstron.com/datasheet/IXTY1R4N60P TRL
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Manufacturer IXYS Series Polar™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V Vgs(th) (Max) @ Id 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |