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IXUC100N055 Datasheet

IXUC100N055 Cover
DatasheetIXUC100N055
File Size571.74 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXUC100N055
Description MOSFET N-CH 55V 100A ISOPLUS-220

IXUC100N055 - IXYS

IXUC100N055 Datasheet Page 1
IXUC100N055 Datasheet Page 2

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IXUC100N055 IXUC100N055 IXYS MOSFET N-CH 55V 100A ISOPLUS-220 446

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URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™