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| Datasheet | IXUC200N055 |
| File Size | 468.5 KB |
| Total Pages | 2 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXUC200N055 |
| Description | MOSFET N-CH 55V 200A ISOPLUS-220 |
IXUC200N055 - IXYS
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IXUC200N055 | IXYS | MOSFET N-CH 55V 200A ISOPLUS-220 | 413 More on Order |
URL Link
www.oemstron.com/datasheet/IXUC200N055
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |