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IXUN280N10 Datasheet

IXUN280N10 Cover
DatasheetIXUN280N10
File Size111.83 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXUN280N10
Description MOSFET N-CH 100V 280A SOT-227B

IXUN280N10 - IXYS

IXUN280N10 Datasheet Page 1
IXUN280N10 Datasheet Page 2

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URL Link

IXUN280N10

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

280A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 140A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

440nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

18000pF @ 25V

FET Feature

-

Power Dissipation (Max)

770W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC