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| Datasheet | JAN1N647-1 |
| File Size | 75.11 KB |
| Total Pages | 1 |
| Manufacturer | Microsemi |
| Website | https://www.microsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | JAN1N647-1 |
| Description | DIODE GEN PURP 400V 400MA DO35 |
JAN1N647-1 - Microsemi
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JAN1N647-1 | Microsemi | DIODE GEN PURP 400V 400MA DO35 | 390 More on Order |
URL Link
www.oemstron.com/datasheet/JAN1N647-1
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Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 400mA Voltage - Forward (Vf) (Max) @ If 1V @ 400mA Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50nA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 175°C |