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| Datasheet | KSC1393YTA |
| File Size | 41.53 KB |
| Total Pages | 4 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | KSC1393YTA, KSC1393RBU, KSC1393OBU, KSC1393YBU, KSC1393OTA, KSC1393RTA |
| Description | RF TRANS NPN 30V 700MHZ TO92-3, RF TRANS NPN 30V 700MHZ TO92-3, RF TRANS NPN 30V 700MHZ TO92-3, RF TRANS NPN 30V 700MHZ TO92-3, RF TRANS NPN 30V 700MHZ TO92-3 |
KSC1393YTA - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |