Semiconductors
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| Datasheet | KSC2500CBU |
| File Size | 38.96 KB |
| Total Pages | 4 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | KSC2500CBU, KSC2500DBU, KSC2500BBU, KSC2500DTA, KSC2500BTA, KSC2500CTA |
| Description | TRANS NPN 10V 2A TO-92L, TRANS NPN 10V 2A TO-92L, TRANS NPN 10V 2A TO-92L, TRANS NPN 10V 2A TO-92L, TRANS NPN 10V 2A TO-92L |
KSC2500CBU - ON Semiconductor
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 10V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 1V Power - Max 900mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 10V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 500mA, 1V Power - Max 900mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 10V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 1V Power - Max 900mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 10V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 500mA, 1V Power - Max 900mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 10V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 1V Power - Max 900mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 10V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 1V Power - Max 900mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-92-3 |