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| Datasheet | KSP45BU |
| File Size | 381.45 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | KSP45BU, KSP45TF, KSP45TA, KSP44TA, KSP44BU, KSP44TF |
| Description | TRANS NPN 350V 0.3A TO-92, TRANS NPN 350V 0.3A TO-92, TRANS NPN 350V 0.3A TO-92, TRANS NPN 400V 0.3A TO-92, TRANS NPN 400V 0.3A TO-92 |
KSP45BU - ON Semiconductor
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 300mA Voltage - Collector Emitter Breakdown (Max) 350V Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA Current - Collector Cutoff (Max) 500nA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 300mA Voltage - Collector Emitter Breakdown (Max) 350V Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA Current - Collector Cutoff (Max) 500nA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 300mA Voltage - Collector Emitter Breakdown (Max) 350V Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA Current - Collector Cutoff (Max) 500nA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 300mA Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA Current - Collector Cutoff (Max) 500nA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 300mA Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA Current - Collector Cutoff (Max) 500nA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 300mA Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA Current - Collector Cutoff (Max) 500nA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |