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MB85R256FPF-G-BND-ERE1 Datasheet

MB85R256FPF-G-BND-ERE1 Cover
DatasheetMB85R256FPF-G-BND-ERE1
File Size1,697.98 KB
Total Pages36
ManufacturerFujitsu Electronics
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts MB85R256FPF-G-BND-ERE1
Description IC FRAM 256K PARALLEL 28SOP

MB85R256FPF-G-BND-ERE1 - Fujitsu Electronics

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MB85R256FPF-G-BND-ERE1 MB85R256FPF-G-BND-ERE1 Fujitsu Electronics IC FRAM 256K PARALLEL 28SOP 241

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URL Link

MB85R256FPF-G-BND-ERE1

Fujitsu Electronics

Manufacturer

Fujitsu Electronics America, Inc.

Series

-

Memory Type

Non-Volatile

Memory Format

FRAM

Technology

FRAM (Ferroelectric RAM)

Memory Size

256Kb (32K x 8)

Memory Interface

Parallel

Clock Frequency

-

Write Cycle Time - Word, Page

150ns

Access Time

150ns

Voltage - Supply

2.7V ~ 3.6V

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

28-SOIC (0.295", 7.50mm Width)

Supplier Device Package

28-SOP