Datasheet | MBR120100CTR |
File Size | 718.49 KB |
Total Pages | 3 |
Manufacturer | GeneSiC Semiconductor |
Website | |
Total Parts | This datasheet covers 8 part numbers |
Associated Parts | MBR120100CTR, MBR120100CT, MBR12080CTR, MBR12080CT, MBR12060CTR, MBR12045CT, MBR12060CT, MBR12045CTR |
Description | DIODE MODULE 100V 120A 2TOWER, DIODE MODULE 100V 120A 2TOWER, DIODE MODULE 80V 120A 2TOWER, DIODE MODULE 80V 120A 2TOWER, DIODE MODULE 60V 120A 2TOWER |
MBR120100CTR - GeneSiC Semiconductor
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MBR120100CT | GeneSiC Semiconductor | DIODE MODULE 100V 120A 2TOWER | 396 More on Order |
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MBR12080CTR | GeneSiC Semiconductor | DIODE MODULE 80V 120A 2TOWER | 369 More on Order |
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MBR12080CT | GeneSiC Semiconductor | DIODE MODULE 80V 120A 2TOWER | 369 More on Order |
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MBR12060CTR | GeneSiC Semiconductor | DIODE MODULE 60V 120A 2TOWER | 494 More on Order |
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MBR12045CT | GeneSiC Semiconductor | DIODE MODULE 45V 120A 2TOWER | 436 More on Order |
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MBR12060CT | GeneSiC Semiconductor | DIODE MODULE 60V 120A 2TOWER | 364 More on Order |
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URL Link
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 840mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 840mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 840mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 840mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |