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MBR20080CTR Datasheet

MBR20080CTR Cover
DatasheetMBR20080CTR
File Size706.91 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBR20080CTR, MBR20045CTR, MBR20080CT, MBR20060CTR, MBR20060CT, MBR20045CT, MBR200100CTR, MBR200100CT
Description DIODE MODULE 80V 200A 2TOWER, DIODE MODULE 45V 200A 2TOWER, DIODE MODULE 80V 200A 2TOWER, DIODE MODULE 60V 200A 2TOWER, DIODE MODULE 60V 200A 2TOWER

MBR20080CTR - GeneSiC Semiconductor

MBR20080CTR Datasheet Page 1
MBR20080CTR Datasheet Page 2
MBR20080CTR Datasheet Page 3

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URL Link

MBR20080CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

840mV @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR20045CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR20080CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

840mV @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR20060CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR20060CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR20045CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR200100CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

840mV @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR200100CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

840mV @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

5mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower