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| Datasheet | MBR40035CTRL |
| File Size | 502.29 KB |
| Total Pages | 3 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | MBR40035CTRL, MBR40035CTL |
| Description | DIODE SCHOTTKY 35V 200A 2 TOWER, DIODE SCHOTTKY 35V 200A 2 TOWER |
MBR40035CTRL - GeneSiC Semiconductor
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 200A Voltage - Forward (Vf) (Max) @ If 600mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 35V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 200A Voltage - Forward (Vf) (Max) @ If 600mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 35V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |