Datasheet | MBR50080CTR |
File Size | 687.5 KB |
Total Pages | 3 |
Manufacturer | GeneSiC Semiconductor |
Website | |
Total Parts | This datasheet covers 8 part numbers |
Associated Parts | MBR50080CTR, MBR50080CT, MBR50060CTR, MBR50060CT, MBR50045CTR, MBR500100CTR, MBR500100CT, MBR50045CT |
Description | DIODE MODULE 80V 500A 2TOWER, DIODE MODULE 80V 500A 2TOWER, DIODE MODULE 600V 500A 2TOWER, DIODE MODULE 600V 500A 2TOWER, DIODE MODULE 45V 500A 2TOWER |
MBR50080CTR - GeneSiC Semiconductor
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GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 880mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 880mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 800mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 800mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 880mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 880mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |