Datasheet | MBRT12040R |
File Size | 687.31 KB |
Total Pages | 3 |
Manufacturer | GeneSiC Semiconductor |
Website | |
Total Parts | This datasheet covers 8 part numbers |
Associated Parts | MBRT12040R, MBRT12040, MBRT12035R, MBRT12035, MBRT12030R, MBRT12030, MBRT12020R, MBRT12020 |
Description | DIODE MODULE 40V 120A 3TOWER, DIODE MODULE 40V 120A 3TOWER, DIODE MODULE 35V 120A 3TOWER, DIODE MODULE 35V 120A 3TOWER, DIODE MODULE 30V 120A 3TOWER |
MBRT12040R - GeneSiC Semiconductor
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MBRT12035R | GeneSiC Semiconductor | DIODE MODULE 35V 120A 3TOWER | 431 More on Order |
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MBRT12035 | GeneSiC Semiconductor | DIODE MODULE 35V 120A 3TOWER | 329 More on Order |
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MBRT12020R | GeneSiC Semiconductor | DIODE MODULE 20V 120A 3TOWER | 299 More on Order |
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MBRT12020 | GeneSiC Semiconductor | DIODE MODULE 20V 120A 3TOWER | 214 More on Order |
URL Link
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |