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MBRT12080R Datasheet

MBRT12080R Cover
DatasheetMBRT12080R
File Size788.13 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBRT12080R, MBRT12080, MBRT12060R, MBRT12060, MBRT12045R, MBRT12045, MBRT120100R, MBRT120100
Description DIODE MODULE 80V 120A 3TOWER, DIODE MODULE 80V 120A 3TOWER, DIODE MODULE 60V 120A 3TOWER, DIODE MODULE 60V 120A 3TOWER, DIODE MODULE 45V 120A 3TOWER

MBRT12080R - GeneSiC Semiconductor

MBRT12080R Datasheet Page 1
MBRT12080R Datasheet Page 2
MBRT12080R Datasheet Page 3

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URL Link

MBRT12080R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

120A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT12080

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

120A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT12060R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

120A (DC)

Voltage - Forward (Vf) (Max) @ If

800mV @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT12060

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

120A (DC)

Voltage - Forward (Vf) (Max) @ If

800mV @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT12045R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

120A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT12045

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

120A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT120100R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

120A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT120100

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

120A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 60A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower