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MBRT60080R Datasheet

MBRT60080R Cover
DatasheetMBRT60080R
File Size685 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBRT60080R, MBRT60060R, MBRT60045R, MBRT600100R, MBRT60080, MBRT60060, MBRT60045, MBRT600100
Description DIODE MODULE 80V 600A 3TOWER, DIODE MODULE 60V 600A 3TOWER, DIODE MODULE 45V 600A 3TOWER, DIODE MODULE 100V 600A 3TOWER, DIODE MODULE 80V 600A 3TOWER

MBRT60080R - GeneSiC Semiconductor

MBRT60080R Datasheet Page 1
MBRT60080R Datasheet Page 2
MBRT60080R Datasheet Page 3

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URL Link

MBRT60080R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT60060R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

800mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT60045R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT600100R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT60080

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT60060

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

800mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT60045

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT600100

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower