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| Datasheet | MCH3376-TL-E |
| File Size | 1,013.64 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | MCH3376-TL-E, MCH3376-TL-W |
| Description | MOSFET P-CH 8A 20V MCPH3, MOSFET P-CH 20V 1.5A MCPH3 |
MCH3376-TL-E - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 241mOhm @ 750mA, 4.5V Vgs(th) (Max) @ Id 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-MCPH Package / Case 3-SMD, Flat Leads |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 241mOhm @ 750mA, 4.5V Vgs(th) (Max) @ Id 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-MCPH Package / Case 3-SMD, Flat Leads |