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| Datasheet | MPS6725RLRPG |
| File Size | 58.15 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 8 part numbers |
| Associated Parts | MPS6725RLRPG, MPS6725RLRP, MPS6724RLRAG, MPS6724RLRA, MPS6724G, MPS6724, MPS6725G, MPS6725 |
| Description | TRANS NPN DARL 50V 1A TO-92, TRANS NPN DARL 50V 1A TO-92, TRANS NPN DARL 40V 1A TO-92, TRANS NPN DARL 40V 1A TO-92, TRANS NPN DARL 40V 1A TO-92 |
MPS6725RLRPG - ON Semiconductor
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Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92 (TO-226) |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92 (TO-226) |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92 (TO-226) |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92 (TO-226) |