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| Datasheet | MPSA12 |
| File Size | 47.95 KB |
| Total Pages | 3 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | MPSA12, MPSA12RLRPG, MPSA12RLRP, MPSA12RLRAG, MPSA12RLRA, MPSA12G |
| Description | TRANS NPN DARL 20V TO-92, TRANS NPN DARL 20V TO-92, TRANS NPN DARL 20V TO-92, TRANS NPN DARL 20V TO-92, TRANS NPN DARL 20V TO-92 |
MPSA12 - ON Semiconductor
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Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 1V @ 10µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA, 5V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 1V @ 10µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA, 5V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 1V @ 10µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA, 5V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 1V @ 10µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA, 5V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 1V @ 10µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA, 5V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 1V @ 10µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA, 5V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |