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MPSH10_D75Z Datasheet

MPSH10_D75Z Cover
DatasheetMPSH10_D75Z
File Size738.11 KB
Total Pages14
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 5 part numbers
Associated Parts MPSH10_D75Z, MPSH10_D74Z, MPSH10_D27Z, MPSH10_D26Z, MMBTH10
Description RF TRANS NPN 25V 650MHZ TO92-3, RF TRANS NPN 25V 650MHZ TO92-3, RF TRANS NPN 25V 650MHZ TO92-3, RF TRANS NPN 25V 650MHZ TO92-3, RF TRANS NPN 25V 650MHZ SOT23-3

MPSH10_D75Z - ON Semiconductor

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URL Link

MPSH10_D75Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSH10_D74Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSH10_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPSH10_D26Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MMBTH10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

25V

Frequency - Transition

650MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

225mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 4mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)