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| Datasheet | MSRT20080(A) |
| File Size | 405 KB |
| Total Pages | 2 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | MSRT20080(A), MSRT20060(A), MSRT200100(A) |
| Description | DIODE MODULE 800V 200A 3TOWER, DIODE MODULE 600V 200A 3TOWER, DIODE MODULE 1KV 200A 3TOWER |
MSRT20080(A) - GeneSiC Semiconductor
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.2V @ 200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 600V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.2V @ 200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 600V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.2V @ 200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 600V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |