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MT47R512M4EB-25E:C Datasheet

MT47R512M4EB-25E:C Cover
DatasheetMT47R512M4EB-25E:C
File Size8,973.7 KB
Total Pages127
ManufacturerMicron Technology Inc.
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts MT47R512M4EB-25E:C, MT47R256M8EB-25E:C
Description IC DRAM 2G PARALLEL 60FBGA, IC DRAM 2G PARALLEL 60FBGA

MT47R512M4EB-25E:C - Micron Technology Inc.

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MT47R512M4EB-25E:C MT47R512M4EB-25E:C Micron Technology Inc. IC DRAM 2G PARALLEL 60FBGA 154

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MT47R256M8EB-25E:C MT47R256M8EB-25E:C Micron Technology Inc. IC DRAM 2G PARALLEL 60FBGA 202

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URL Link

MT47R512M4EB-25E:C

Micron Technology Inc.

Manufacturer

Micron Technology Inc.

Series

-

Memory Type

Volatile

Memory Format

DRAM

Technology

SDRAM - DDR2

Memory Size

2Gb (512M x 4)

Memory Interface

Parallel

Clock Frequency

400MHz

Write Cycle Time - Word, Page

15ns

Access Time

400ps

Voltage - Supply

1.55V ~ 1.9V

Operating Temperature

0°C ~ 85°C (TC)

Mounting Type

Surface Mount

Package / Case

60-TFBGA

Supplier Device Package

60-FBGA (9x11.5)

MT47R256M8EB-25E:C

Micron Technology Inc.

Manufacturer

Micron Technology Inc.

Series

-

Memory Type

Volatile

Memory Format

DRAM

Technology

SDRAM - DDR2

Memory Size

2Gb (256M x 8)

Memory Interface

Parallel

Clock Frequency

400MHz

Write Cycle Time - Word, Page

15ns

Access Time

400ps

Voltage - Supply

1.55V ~ 1.9V

Operating Temperature

0°C ~ 85°C (TC)

Mounting Type

Surface Mount

Package / Case

60-FBGA

Supplier Device Package

60-FBGA (9x11.5)