Datasheet | MURT10020R |
File Size | 744.26 KB |
Total Pages | 3 |
Manufacturer | GeneSiC Semiconductor |
Website | |
Total Parts | This datasheet covers 6 part numbers |
Associated Parts | MURT10020R, MURT10020, MURT10010R, MURT10010, MURT10005R, MURT10005 |
Description | DIODE ARRAY GP REV POLAR 3TOWER, DIODE ARRAY GP 200V 100A 3TOWER, DIODE MODULE 100V 100A 3TOWER, DIODE MODULE 100V 100A 3TOWER, DIODE MODULE 50V 100A 3TOWER |
MURT10020R - GeneSiC Semiconductor
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MURT10005R | GeneSiC Semiconductor | DIODE MODULE 50V 100A 3TOWER | 176 More on Order |
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MURT10005 | GeneSiC Semiconductor | DIODE MODULE 50V 100A 3TOWER | 246 More on Order |
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GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) (per Diode) 100A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -40°C ~ 175°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) (per Diode) 100A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -40°C ~ 175°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 100A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 100A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) (per Diode) 100A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) (per Diode) 100A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |