Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | MURTA500120R |
| File Size | 744.44 KB |
| Total Pages | 4 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | MURTA500120R, MURTA500120, MURTA50060R, MURTA50060 |
| Description | DIODE GEN 1.2KV 250A 3 TOWER, DIODE GEN 1.2KV 250A 3 TOWER, DIODE MODULE 600V 500A 3TOWER, DIODE MODULE 600V 500A 3TOWER |
MURTA500120R - GeneSiC Semiconductor
The Products You May Be Interested In
 |
MURTA500120R | GeneSiC Semiconductor | DIODE GEN 1.2KV 250A 3 TOWER | 208 More on Order |
 |
MURTA500120 | GeneSiC Semiconductor | DIODE GEN 1.2KV 250A 3 TOWER | 304 More on Order |
 |
MURTA50060R | GeneSiC Semiconductor | DIODE MODULE 600V 500A 3TOWER | 290 More on Order |
 |
MURTA50060 | GeneSiC Semiconductor | DIODE MODULE 600V 500A 3TOWER | 440 More on Order |
URL Link
|
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) 250A Voltage - Forward (Vf) (Max) @ If 2.6V @ 250A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25µA @ 1200V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) 250A Voltage - Forward (Vf) (Max) @ If 2.6V @ 250A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 25µA @ 1200V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 250ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 250ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |