Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | MVB50P03HDLT4G |
| File Size | 138.11 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | MVB50P03HDLT4G |
| Description | INTEGRATED CIRCUIT |
MVB50P03HDLT4G - ON Semiconductor
The Products You May Be Interested In
 |
MVB50P03HDLT4G | ON Semiconductor | INTEGRATED CIRCUIT | 433 More on Order |
URL Link
www.oemstron.com/datasheet/MVB50P03HDLT4G
|
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 25mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 4.9nF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |