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| Datasheet | NCV5106ADR2G |
| File Size | 104.97 KB |
| Total Pages | 17 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NCV5106ADR2G |
| Description | IC MOSFET DVR HIGH VOLT 8SOIC |
NCV5106ADR2G - ON Semiconductor
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NCV5106ADR2G | ON Semiconductor | IC MOSFET DVR HIGH VOLT 8SOIC | 448 More on Order |
URL Link
www.oemstron.com/datasheet/NCV5106ADR2G
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Manufacturer ON Semiconductor Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.3V Current - Peak Output (Source, Sink) 250mA, 500mA Input Type Inverting, Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 85ns, 35ns Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |