Semiconductors
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| Datasheet | NDB6030PL |
| File Size | 175.65 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NDB6030PL, NDP6030PL |
| Description | MOSFET P-CH 30V 30A D2PAK, MOSFET P-CH 30V 30A TO-220 |
NDB6030PL - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 15V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 15V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |