Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NDD03N40Z-1G |
| File Size | 122.57 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NDD03N40Z-1G, NDT03N40ZT1G, NDD03N40ZT4G, NDT03N40ZT3G |
| Description | MOSFET N-CH 400V 2.1A IPAK-4, MOSFET N-CH 400V 0.5A SOT223-4, MOSFET N-CH 400V 2.1A DPAK-3, MOSFET N-CH 400V 0.5A SOT223-4 |
NDD03N40Z-1G - ON Semiconductor
The Products You May Be Interested In
 |
NDD03N40Z-1G | ON Semiconductor | MOSFET N-CH 400V 2.1A IPAK-4 | 316 More on Order |
 |
NDT03N40ZT1G | ON Semiconductor | MOSFET N-CH 400V 0.5A SOT223-4 | 115 More on Order |
 |
NDD03N40ZT4G | ON Semiconductor | MOSFET N-CH 400V 2.1A DPAK-3 | 255 More on Order |
 |
NDT03N40ZT3G | ON Semiconductor | MOSFET N-CH 400V 0.5A SOT223-4 | 480 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 600mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 600mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 (TO-261) Package / Case TO-261-4, TO-261AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 600mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 600mA, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 (TO-261) Package / Case TO-261-4, TO-261AA |