Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

NDD60N550U1-35G Datasheet

NDD60N550U1-35G Cover
DatasheetNDD60N550U1-35G
File Size133.36 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts NDD60N550U1-35G, NDD60N550U1-1G, NDD60N550U1T4G
Description MOSFET N-CH 600V 8.2A IPAK-3, MOSFET N-CH 600V 8.2A IPAK-4, MOSFET N-CH 600V 8.2A DPAK-3

NDD60N550U1-35G - ON Semiconductor

NDD60N550U1-35G Datasheet Page 1
NDD60N550U1-35G Datasheet Page 2
NDD60N550U1-35G Datasheet Page 3
NDD60N550U1-35G Datasheet Page 4
NDD60N550U1-35G Datasheet Page 5
NDD60N550U1-35G Datasheet Page 6
NDD60N550U1-35G Datasheet Page 7
NDD60N550U1-35G Datasheet Page 8

The Products You May Be Interested In

NDD60N550U1-35G NDD60N550U1-35G ON Semiconductor MOSFET N-CH 600V 8.2A IPAK-3 354

More on Order

NDD60N550U1-1G NDD60N550U1-1G ON Semiconductor MOSFET N-CH 600V 8.2A IPAK-4 299

More on Order

NDD60N550U1T4G NDD60N550U1T4G ON Semiconductor MOSFET N-CH 600V 8.2A DPAK-3 296

More on Order

URL Link

NDD60N550U1-35G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 50V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

NDD60N550U1-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 50V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

NDD60N550U1T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 50V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63