Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NDF05N50ZH |
| File Size | 143.49 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NDF05N50ZH, NDD05N50ZT4G, NDF05N50ZG, NDD05N50Z-1G |
| Description | MOSFET N-CH 500V 5.5A TO-220FP, MOSFET N-CH 500V 5A DPAK, MOSFET N-CH 500V TO-220FP, MOSFET N-CH 500V 5A IPAK |
NDF05N50ZH - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 632pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 632pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |