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| Datasheet | NDS8852H |
| File Size | 349.57 KB |
| Total Pages | 12 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NDS8852H |
| Description | MOSFET N/P-CH 30V 8SOIC |
NDS8852H - ON Semiconductor
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NDS8852H | ON Semiconductor | MOSFET N/P-CH 30V 8SOIC | 295 More on Order |
URL Link
www.oemstron.com/datasheet/NDS8852H
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Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.3A, 3.4A Rds On (Max) @ Id, Vgs 80mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |