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| Datasheet | NGTB10N60R2DT4G |
| File Size | 619.86 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NGTB10N60R2DT4G |
| Description | IGBT 10A 600V DPAK |
NGTB10N60R2DT4G - ON Semiconductor
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NGTB10N60R2DT4G | ON Semiconductor | IGBT 10A 600V DPAK | 109 More on Order |
URL Link
www.oemstron.com/datasheet/NGTB10N60R2DT4G
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A Power - Max 72W Switching Energy 412µJ (on), 140µJ (off) Input Type Standard Gate Charge 53nC Td (on/off) @ 25°C 48ns/120ns Test Condition 300V, 10A, 30Ohm, 15V Reverse Recovery Time (trr) 90ns Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |