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Datasheet | NGTB30N120FL2WG |
File Size | 106.55 KB |
Total Pages | 8 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | NGTB30N120FL2WG |
Description | IGBT 1200V 60A 452W TO247 |
NGTB30N120FL2WG - ON Semiconductor
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NGTB30N120FL2WG | ON Semiconductor | IGBT 1200V 60A 452W TO247 | 463 More on Order |
URL Link
www.oemstron.com/datasheet/NGTB30N120FL2WG
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A Power - Max 452W Switching Energy 2.6mJ (on), 700µJ (off) Input Type Standard Gate Charge 220nC Td (on/off) @ 25°C 98ns/210ns Test Condition 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr) 240ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |