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NGTB30N120IHRWG Datasheet

NGTB30N120IHRWG Cover
DatasheetNGTB30N120IHRWG
File Size176.16 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NGTB30N120IHRWG
Description IGBT 1200V 60A 384W TO247

NGTB30N120IHRWG - ON Semiconductor

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URL Link

NGTB30N120IHRWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 30A

Power - Max

384W

Switching Energy

700µJ (off)

Input Type

Standard

Gate Charge

225nC

Td (on/off) @ 25°C

-/230ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247