Datasheet | NGTB35N65FL2WG |
File Size | 93.42 KB |
Total Pages | 8 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | NGTB35N65FL2WG |
Description | IGBT 650V 70A 300W TO247 |
NGTB35N65FL2WG - ON Semiconductor
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NGTB35N65FL2WG | ON Semiconductor | IGBT 650V 70A 300W TO247 | 495 More on Order |
URL Link
www.oemstron.com/datasheet/NGTB35N65FL2WG
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 70A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A Power - Max 300W Switching Energy 840µJ (on), 280µJ (off) Input Type Standard Gate Charge 125nC Td (on/off) @ 25°C 72ns/132ns Test Condition 400V, 35A, 10Ohm, 15V Reverse Recovery Time (trr) 68ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |