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NGTB50N120FL2WG Datasheet

NGTB50N120FL2WG Cover
DatasheetNGTB50N120FL2WG
File Size106.47 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NGTB50N120FL2WG
Description IGBT 1200V 100A 535W TO247

NGTB50N120FL2WG - ON Semiconductor

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URL Link

NGTB50N120FL2WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 50A

Power - Max

535W

Switching Energy

4.4mJ (on), 1.4mJ (off)

Input Type

Standard

Gate Charge

311nC

Td (on/off) @ 25°C

118ns/282ns

Test Condition

600V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

256ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247